TORIUMI / NAGASHIO LABORATORY
Department of Materials Engineering, Graduate School of Engineering
The University of Tokyo
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PUBLICATION LIST
2014 2013 2012 2011  2010  2009 
2008 2007 2006 2005 2004 2003 2002 2001
  Awards List

2014
Journals
  • C. Lu, C. H. Lee, W. Zhang, T. Nishimura, K. Nagashio, and A. Toriumi
    "Enhancement of thermal stability and water resistance in yttrium-doped GeO2/Ge gate stack. "
    Applied Physics Letters 104, 092909 (2014).

International Conference
  • C. H. Lee, T. Nishimura, C. Lu, W. F. Zhang, K. Nagashio, and A. Toriumi
    " Enhancement of High-Ns Electron Mobility in Ge(111) n-MOSFETs by the Formation of Atomically Flat GeO2/Ge Interface"
    7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
    (Jan. 27-28, 2014, Sendai, Japan)
  • S. Kabuyanagi, T. Nishimura, K. Nagashio, and A. Toriumi
    "Direct Band Gap Modulation in Ultra-thin Highly Doped n-type GeOI "
    7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
    (Jan. 27-28, 2014, Sendai, Japan)
  • C. Lu, C. H. Lee, W. Zhang, T. Nishimura, K. Nagashio and A. Toriumi
    " Selection of desirable trivalent metal oxides as doping material into GeO2 "
    7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
    (Jan. 27-28, 2014, Sendai, Japan)

2013
Journals
  • R. Ifuku, K. Nagashio, T. Nishimura, and A. Toriumi,
    "The density of states of graphene underneath a metal electrode and its correlation with the contact resistivity",
    Applied Physics Letters, 103, 033514-1 ~ 033514-5 (2013),
    published online Jul. 18, 2013,
    DOI: 10.1063/1.4815990
  • T. Moriyama, K. Nagashio, T. Nishimura, and A. Toriumi,
    "Carrier density modulation in graphene underneath Ni electrode",
    Journal of Applied Physics, 114, 024503-1 ~ 024503-8 (2013),
    published online Jul. 11, 2013
    DOI:10.1063/1.4813216
  • C. H. Lee, T. Nishimura, T. Tabata, D. D. Zhao, K. Nagashio, and A. Toriumi,
    "Characterization of electron mobility in ultrathin body germanium-on-insulator metal-insulator-semiconductor field-effect transistors"
    Applied Physics Letters, 102, 232107-1 ~ 232107-4(2013),
    published online Jun. 14, 2013,
    DOI:10.1063/1.4810002
  • A. Toriumi, K. Nagashio, T. Moriyama, and R. Ifuku,
    "Graphene underneath Metals",
    Ecs Transactions, Vo.l.53, No.1(2013),pp.71-79,
    DOI:10.1149/05301.007ecst
  • K. Nagashio, T. Nishimura, and A. Toriumi,
    "Estimation of residual carrier density near the Dirac point in graphene through quantum capacitance measurement"
    Applied Physics Letters, 102 , 173507-1 ~ 173507-4(2013),
    published online May. 3, 2013,
    DOI:10.1063/1.4804430
  • W. F. Zhang, T. Nishimula, K. Nagashio, K. Kita, and A. Toriumi,
    "Conduction band offset at GeO2/Ge interface determined by internal photoemission and charge-corrected x-ray photoelectron spectroscopies"
    Applied Physics Letters, 102 , 102106-1 ~ 102106-4(2013),
    published online Mar. 6, 2013
    DOI:10.1063/1.4794417
  • Y. Chikata, K. Kita, T. Nishimura, K. Nagashio, and A. Toriumi,
    "Quantitative Characterization of Band-Edge Energy Positions in High-k Dielectrics by X-ray Photoelectron Spectroscopy",
    Japanese Journal of Applied Physics, 52(2013) 021101-1 ~
    021101-6,
    published online Jan. 16, 2013

    DOI:10.7567/JJAP.52.021101
International Conference
  • K. Kanayama, K. Nagashio,T. Nishimura and A.Toriumi,
    "Asymmetry of Conduction and Valence Bands in Bilayer Graphene Estimated by The Quantum Capacitance Measurement",
    2013 International Conference on Solid State Devices and Materials (SSDM),
    (Sep. 27, 2013, Hilton Fukuoka Sea Hawk, Fukuoka)
  • S. Kabuyanag, T. Nishimura, K.Nagashio and A.Toriumi
    "Demonstration of High Electron Mobility in Germanium n-channel Junctionless FETs",
    2013 International Conference on Solid State Devices and Materials (SSDM),
    (Sep. 27, 2013, Hilton Fukuoka Sea Hawk, Fukuoka)
  • T. Nishimura, T. Nakamura, T. Yajima, K. Nagashio and A.Toriumi,
    "Charge neutrality level shift in the Bardeen limit of Fermi-level pinning at atomically flat Ge/metal interface",
    2013 International Conference on Solid State Devices and Materials (SSDM),
    (Sep. 26, 2013, Hilton Fukuoka Sea Hawk, Fukuoka)
  • C. Lu, C.H. Lee, W.F.Zhang, T. Nishimura, K. Nagashio, and A. Toriumi,
    "Thermodynamic consideration and experimental demonstration for solving the problems of GeO2 solubility in H2O and GeO desorption from GeO2/Ge",
    2013 International Conference on Solid State Devices and Materials (SSDM),
    (Sep. 26, 2013, Hilton Fukuoka Sea Hawk, Fukuoka)
  • C.H. Lee, T. Nishimura, T. Tabata, K. Nagashio, and A. Toriumi,
    "Layer-by-Layer GeO2 Formation in the Self-Limited Oxidation Regime of Ge",
    2013 International Conference on Solid State Devices and Materials (SSDM),
    (Sep. 26, 2013, Hilton Fukuoka Sea Hawk, Fukuoka)
  • G. Oike, T. Yajima, T. Nishimura, K. Nagashio and A.Toriumi,
    "Significant Conductivity Enhancement of TiO2 Films by Both Field Effect and Chemical Doping",
    2013 International Conference on Solid State Devices and Materials (SSDM),
    (Sep. 26, 2013, Hilton Fukuoka Sea Hawk, Fukuoka)
  • T. Yajima, G. Oike, T. Nishimura, K. Nagashio and A. Toriumi,
    "High-Mobility TiO2-Channel TFTs with Optimized Anatase Microstructures",
    2013 International Conference on Solid State Devices and Materials (SSDM),
    (Sep. 26, 2013, Hilton Fukuoka Sea Hawk, Fukuoka)
  • T. Iwai, T. Yajima, T. Nishimura, K. Nagashio and A. Toriumi,
    "A New Ar Desorption Peak in Thermal Desorption Spectroscopy Measurement of Sputtered HfO2 Accompanied by its Structural Phase Transformation",
    2013 International Conference on Solid State Devices and Materials (SSDM),
    (Sep. 26, 2013, Hilton Fukuoka Sea Hawk, Fukuoka)
  • X. Li, T. Yajima, T. Nishimura, K. Nagashio and A. Toriumi,
    "Study of the interfacial SiO2 scavenging in HfO2/SiO2/Si stacks through the ultra-high vacuum annealing"
    2013 International Conference on Solid State Devices and Materials (SSDM),
    (Sep. 26, 2013, Hilton Fukuoka Sea Hawk, Fukuoka)
  • W.F. Zhang, C.H. Lee, C.M. Lu, T. Nishimura, K. Nagashio, K. Kita and A. Toriumi,
    "Effects of the Interface-related and Bulk-fixed Charges in Ge/GeO2 Stack on Band Bending of Ge Studied by X-ray Photoemission Spectroscopy",
    2013 International Conference on Solid State Devices and Materials (SSDM),
    (Sep. 26, 2013, Hilton Fukuoka Sea Hawk, Fukuoka)
  • T. Tabata, C.H. Lee, T. Nishimura, K. Nagashio and A. Toriumi,
    "Effect of Oxygen Potential Lowering in N-doped GeO2 on Suppression of GeO Desorption and Planarization of Ge Interface",
    2013 International Conference on Solid State Devices and Materials (SSDM),
    (Sep. 26, 2013, Hilton Fukuoka Sea Hawk, Fukuoka)
  • J.L. Qi, K. Nagashio1, W. Liu, T. Nishimura and A. Toriumi,
    "Epitaxial CVD graphene growth on Cu/mica for gate stack research",
    2013 International Conference on Solid State Devices and Materials (SSDM),
    (Sep. 26, 2013, Hilton Fukuoka Sea Hawk, Fukuoka)
  • T. Yajima, G. Oike, T. Nishimura, K. Nagashio and Akira Toriumi,
    "High Mobility Polycrystalline TiO2-Channel Field Effect Transistor",
    Workshop on Oxide Electronics 20 (WEO20),
    (Sep. 24, 2013, Singapole)
  • K. Nagashio, K. Kanayama, T. Nishimura and A. Toriumi,
    "Quantum capacitance measurements in monolayer & bilayer graphene",
    2013 JSAP-MRS Joint Symposia,
    (Sep. 19, 2013, Kyotanabe Campus, Doshisha University,Kyoto)
  • K. Kanayama, K. Nagashio, T. Nishimura and A. Toriumi,
    "Asymmetric upper sub-band structure in conduction & valence bands for bilayer graphene elucidated by quantum capacitance measurement"
    RPGR2013
    (Sep. 12, 2013, Tokyo Tech Front, Tokyo)
  • K. Nagashio, R. Ifuku, T. Nishimura and A. Toriumi,
    "DOS estimation of graphene in the contact structre by quantum capacitance measurment"
    RPGR2013
    (Sep. 11, 2013, Tokyo Tech Front, Tokyo)
  • C.H. Lee, C. Lu, T. Tabata, T. Nishimura, K. Nagashio, and A. Toriumi,
    "Enhancement of High-Ns Electron Mobility in Sub-nm EOT Ge n-MOSFETs",
    2013 Symposia on VLSI Technology,
    (Jun. 11, 2013 , Rihga Royal Hotel Kyoto, Kyoto)
  • W. J. Song, W. F. Zhang, C. H. Lee, T. Nishimura, and A. Toriumi,
    "Ultra-thin GeO2 Formation by Oxygen Radicals (O*) for Advanced Ge Gate Stacks - Reaction kinetics, film quality and MIS characteristics -",
    2013 Silicon Nanoelectronics Workshop,
    (Jun. 9, 2013 , Rihga Royal Hotel Kyoto, Kyoto)
  • W.F. Zhang, T. Nishimura, K. Nagashio, K. Kita, and A. Toriumi,
    "Impact of Oxidation Pressure on the Band Alignment at GeO2/GeProbed by Internal Photoemission Spectroscopy"
    ICSI-8 and ISCSI-VI,
    (Jun. 6, 2013, Kyushu University School of Medicine, Fukuoka) pp. 131 - 132
  • X.Y. Li, T. Yajima, T. Nishimura, K. Nagashio, and A. Toriumi,
    "HfO2-assisted SiO2 Reduction in HfO2/SiO2/Si Stacks",
    ICSI-8 and ISCSI-VI,
    (Jun. 6, 2013, Kyushu University School of Medicine, Fukuoka) pp. 129 - 130
  • T. Nishimura, T. Nakamura, and A. Toriumi,
    "Study of Strong Fermi Level Pinning at Metal/Germanium Interface Based on the Impact of Ultra-thin Insulator Insertion"
    ICSI-8 and ISCSI-VI,
    (Jun. 4, 2013, Kyushu University School of Medicine, Fukuoka) pp. 311 - 312
  • C. H. Lee, T. Nishimura, T. Tabata, K. Nagashio, and A. Toriumi,
    "Ion Implantation-Induced Defects Generated in PN Junction Formation of Germanium",
    ICSI-8 and ISCSI-VI,
    (Jun. 3, 2013, Kyushu University School of Medicine, Fukuoka) pp. 225 - 226
  • S. Kabuyanagi, T. Nishimura, K. Nagashio, and A. Toriumi,
    "Effects of PDA Ambient on Leakage Current in Poly-Ge TFTs",
    ICSI-8 and ISCSI-VI,
    (Jun. 3, 2013, Kyushu University School of Medicine, Fukuoka) pp. 155 - 156
  • A. Toriumi, T. Moriyama, R. Ifuku, and K. Nagashio,
    "Graphene in contact with metals",
    E-MRS 2013 SPRING MEETING,
    (May 30, 2013, Strasbourg, France)
  • A. Toriumi, C. H. Lee, T. Tabata, and T. Nishimura,
    "High performance Ge n- and p-MOSFETs for advanced CMOS", invited,
    E-MRS 2013 SPRING MEETING,
    (May 27, 2013, Strasbourg, France)
  • K. Nagashio, R. Ifuku, T. Nishimura, and A. Toriumi,
    "Estimation of DOS in graphene in contact with metals by quantum capacitance measurment",
    The 40th Int. Symp. on Compound Semiconductors,
    (May 22, 2013, Kove convention center, Hyogo)
  • A. Toriumi, K. Nagashio, T. Moriyama, and R. Ifuku,
    "Graphene underneath Metals", invited,
    223rd ECS Meeting,
    (May 15, 2013, Toronto)
  • K. Nagashio, T. Nishimura,  and A.  Toriumi,
    "Band gap estimation in bilayer graphene through quantum capacitance measurement",
    APS March Meeting 2013,

    (Mar.18, 2013, Baltimore)
  • R. Ifuku, K. Nagashio, T. Nishimura, and A. Toriumi,
    "Resist-free graphene/metal interaction extracted through quantum capacitance measurement",
    APS March Meeting 2013,

    (Mar.18, 2013, Baltimore)
  • T. Nishimura and A Toriumi,
    "Impact of Ultra-thin Insulator Insertion on Ge/Metal Interaction", invited
    6th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar,
    (Feb.23, 2013, Tohoku University, Sendai)
  • S. Kabuyanagi, T. Nishimura, K. Nagashio and A. Toriumi,
    "Substrate-oxide-sensitive Ge TFT Characteristics",
    6th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar,
    (Feb.23, 2013, Tohoku University, Sendai)

  • W. Song, C. H. Lee, T. Nishimura, K. Nagashio, and A. Toriumi,
    "Oxidation kinetics of Ge by oxygen radicals",
    ISPlasma2013,
    (Jan. 30, 2013, Nagoya University, Nagoya)
  • K. Nagashio, and A. Toriumi,
    "Extraction of quantum capacitance in monolayer graphene",
    ISPlasma2013,
    (Jan. 29, 2013, Nagoya University, Nagoya)
2012
Journals
  • T. Nishimura, C. H. Lee, K. Nagashio, and A. Toriumi,
    "Step and Terrace Formation on Ge(111) Surface in H2 Annealing"
    Applied Physics Express 5 (2012) 121301,
    published online Nov. 20, 2012
  • C. H. Lee, T. Tabata, T. Nishimura, K. Nagashio, and A. Toriumi,
    "Oxidation Rate Reduction of Ge with O2 Pressure Increase",
    Applied Physics Express, 5 (2012)114001,
    published online Nov. 8, 2012
  • S. Hibino, T. Nishimura, K. Nagashio, K. Kita, and A. Toriumi,
    "Interface Dipole Cancellation in SiO2/High--‐k/SiO2/Si Gate Stacks"
    Ecs Transactions, Vo.l.50, No.4(2012), pp.159-163,

    published Oct., 2012,
    DOI:10.1149/05004.0159ecst
  • W. Zhang, T. Nishimura, K. Nagashio, K. Kita, and A. Toriumi,
    "Conduction Band-offset in GeO2/Ge Stack Determined by Internal Photoemission Spectroscopy",
    Ecs Transactions, Vo.l.50, No.4(2012), pp.91-95,

    published Oct., 2012,
    DOI:10.1149/05004.0091ecst
  • C. H. Lee, T. Nishimura, T. Tabata, K. Nagashio, K. Kita, and A. Toriumi,
    "Variation of Surface Roughness on Ge Substrate by Cleaning in Deionized Water and its Influence on Electrical Properties in Ge Metal-Oxide-Semiconductor Field-Effect Transistors",
    Japanese Journal of Applied Physics, 51 (2012) 104203,
    published online Oct. 2, 2012
  • T. Tabata, K. Nagashio, and A. Toriumi,
    "Effect of High-Pressure Inert Gas Annealing on AlON/Ge Gate Stacks"
    Applied Physics Express, 5 (2012) 091002,
    published online Aug. 22, 2012
  • S. K. Wang, H.-G. Liu, and A. Toriumi,
    "Kinetic study of GeO disproportionation into a GeO2/Ge system using x-ray photoelectron spectroscopy"
    Applied Physics Letters 101 (2012) 061907,
    published online Aug. 6, 2012
  • S. Hibino, T. Nishimura, K. Nagashio, K. Kita and A. Toriumi,
    "Counter Dipole Layer Formation in Multi-layer High-k Gate Stacks"
    Japanese Journal of Applied Physics, 51 (2012) 081303,
    published online Aug. 2, 2012,

    DOI:10.1143/JJAP.51.081303
  • D.D. Zhao, C. H. Lee, T. Nishimura, K. Nagashio, G. A. Cheng and A. Toriumi,
    "Experimental and Analytical Characterization of Dual-Gated Germanium Junctionless p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors",
    Japanese Journal of Applied Physics, 51 (2012) 04DA03,
    published online Apr. 20, 2012
International Conferences
  • K. Nagashio, R. Ifuku, T. Moriyama, T. Nishimura, and A. Toriumi,
    "Intrinsic graphene/metal contact", Invited
    2012 IEEE International Electron Device Meeting (IEDM2012), pp.68-71,
    (Dec. 10, 2012, San Francisco).
  • S. Kabuyanagi, T. Nishimura, K. Nagashio, and A. Toriumi,
    "Impacts of Surface Treatment of SiO2/Si Substrate on the Electrical Property of Polycrystalline Germanium Thin Film Transistor",
    43rd IEEE Semiconductor Interface Specialists Conference (SISC2012),
    (Dec.6, 2012, San Diego).
  • W. Zhang, T. Nishimura, K. Nagashio, K. Kita, and A. Toriumi,
    "Conduction Band-offset in GeO2/Ge Stack Determined by Internal Photoemission Spectroscopy",
    PACIFIC RIM MEETING 2012 (PRiME 2012),
    (Oct.9, 2012, Honolulu)
  • S. Hibino, T. Nishimura, K. Nagashio, K. Kita, and A. Toriumi,
    "Interface Dipole Cancellation in SiO2/High-k/SiO2/Si Gate Stacks",
    PACIFIC RIM MEETING 2012 (PRiME 2012),
    (Oct.9, 2012, Honolulu)
  • T. Nishimura, K. Nagashio, K. Kita, and A. Toriumi,
    "Study of Fermi Level Pinning at Metal/Semiconductor Interface through Re-investigation of Interfacial Alloy Interaction",
    2012 International Conference on Solid State Devices and Materials (SSDM),
    pp.751-752.,(Sep. 27, 2012, Kyoto)
  • T. Iwai, Y. Nakajima, T. Nishimura, K. Nagashio, and A. Toriumi,
    "Role of Ar on Structual Phase Transformation of Sputtered HfO2",
    2012 International Conference on Solid State Devices and Materials (SSDM),

    pp.767-768., (Sep.27, 2012, Kyoto)
  • K. Nagashio, T. Nishimura and A. Toriumi,
    "Top-gated graphene FET with Y2O3 for quantum capacitance estimation",
    2012 International Conference on Solid State Devices and Materials(SSDM),
    pp.678-679.,(Sep.26, 2012, Kyoto)
  • T. Moriyama, K. Nagashio, T. Nishimura and A. Toriumi,
    "Bias Dependent G-band Shift of Graphene in Direct Contacting with Ni",
    2012 International Conference on Solid State Devices and Materials(SSDM),
    pp.438-439.,(Sep.26, 2012, Kyoto)
  • R. Ifuku, K. Nagashio, T. Nishimura and A. Toriumi,
    "Estimation of Metal-graphene Interaction Strength Through Quantum Capacitance Extraction of Graphene in Contact with Metal",
    2012 International Conference on Solid State Devices and Materials(SSDM),
    pp.446-447.,(Sep.26, 2012, Kyoto)
  • T. Tabata, C. H. Lee, T. Nishimura, K. Nagashio, and A. Toriumi,
    "Aluminum Nitride for Ge-MIS Gate Stacks with Scalable EOT",
    2012 International Conference on Solid State Devices and Materials (SSDM),
    pp.741-742.,(Sep. 26, 2012, Kyoto)
  • S. Kabuyanagi, T. Nishimura, K. Nagashio, and A. Toriumi,
    "Impacts of interfacial insulator on poly-crystalline germanium growth in low temperature processing",
    2012 International Conference on Solid State Devices and Materials (SSDM),
    pp.18-19.,(Sep. 26, 2012, Kyoto)
  • W. J. Song, C. H. Lee, T. Nishimura, K. Nagashio, and A. Toriumi,
    "Oxidation Kinetics of Ge by Oxygen Radicals at Low Temperatures and Electrical Properties of GeO2/Ge Gate Stacks",
    2012 International Conference on Solid State Devices and Materials (SSDM),
    pp.745-746.,(Sep. 26, 2012, Kyoto)
  • W. F. Zhang, T. Nishimura, K. Nagashio, K. Kita, and A. Toriumi,
    "Band-offset Determination at Ge/GeO2 Interface by Internal Photoemission and Charge-corrected X-ray Photo-electron Spectroscopies",
    2012 International Conference on Solid State Devices and Materials (SSDM),
    pp.731-732.,(Sep. 25, 2012, Kyoto)
  • C. H. Lee, T. Tabata, T. Nishimura, K. Nagashio, K. Kita, and A. Toriumi,
    "Characterization of phosphorus-implanted n+/p Ge junctions by reversely biased leakage current and Raman spectroscopy",
    2012 International Conference on Solid State Devices and Materials (SSDM),
    pp.733-734.,(Sep. 25, 2012, Kyoto)
  • A. Toriumi,
    "Materials Engineering of Ge Interfaces with Insulators and Metals", invited,
    17th Workshop on Dielectrics in Microelectronics(WoDiM 2012),
    (Jun. 25, 2012, Dresden)
  • S.Hibino, T. Nishimura, K. Nagashio, K. Kita, and A. Toriumi,
    "Counter Dipole Layer Formation in SiO2/High-­‐k/SiO2/Si Gate Stacks",
    2012 IEEE Silicon Nanoelectronics Workshop,
    (Jun. 10, 2012, Honolulu)
  • A. Toriumi, C. H. Lee, S. Wanga, D. Zhao, T. Tabata, T. Nishimura, K. Kita, and K. Nagashio,
    "Recent Progress of Ge Gate Stack Technology", invited,
    6th International SiGe Technology and Devices Meeting,
    (Jun. 5, 2012, Berkeley)
  • A. Toriumi,
    "Recent Progress of Germanium MOSFETs", invited,
    The 2012 International Meeting for Future of Electron Devices, Kansai,
    (May 9, 2012, Kansai University, Osaka)
  • T.Moriyama, K.Nagashio, T. Nishimura, and A. Toriumi,
    "Electrical transport properties of graphene in contact with Ni"
    2012 MRS Spring Meeting,
    (Apr. 10, 2012, San Francisco)
  • K. Kita, S.K. Wang, T. Tabata, C.H. Lee, T. Nishimura, K. Nagashio, and A. Toriumi,
    "Control of Ge/High-k Interface for Ge CMOS Technology", Invited,
    39th Conference on the Physics and Chemistry of Surfaces and Interfaces(PCSI-39),
    (Jan. 25, 2012, Santa Fe)
  • A. Toriumi,
    "Si-friendly materials beyond Si for new electron devices", invited,
    Enabling Science and Nanotechnology (ESciNano2012)
    (Jan. 7, 2012, Johor Bahru)
2011
Journals
  • K. Tomida, K. Kita and A. Toriumi,
    "Higher-k Scalability and Leakage Current Reduction of SiO2-Doped HfO2 in Direct Tunneling Regime",
    Japanese Journal of Applied Physics, 50 (2011) 111502,
    published online Oct. 27, 2011

  • S. k. Wang, K. Kita, T. Nishimura, K. Nagashio and A. Toriumi,
    "Kinetic Effects of O-Vacancy Generated by GeO2/Ge Interfacial Reaction",
    Japanese Journal of Applied Physics, 50 (2011) 10PE04-1,
    published online Oct. 20, 2011
  • K. Nagashio, T. Yamashita, T. Nishimura, K. Kita and A. Toriumi,
    "Electrical transport properties of graphene on SiO2 with specific surfacestructures",
    Journal of Applied Physics, 110, 024513 (2011),
    published online Jul. 29, 2011
  • K. Nagashio, A. Toriumi,
    "Density-of-States Limited Contact Resistance in Graphene Field-Effect Transistors",

    Japanese Journal of Applied Physics, 50 (2011) 070108,
    published online Jul. 20, 2011
  • T. Nishimura, C.H. Lee, T. Tabata, S.K. Wang, K. Nagashio, K. Kita and A. Toriumi,
    "High-Electron-Mobility Ge n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y2O3",
    Applied Physics Express, 4 (2011)064201, published online Jun. 2, 2011
  • A. Toriumi, C.H. Lee, T. Nishimura, S.K. Wang, K. Kita, and K. Nagashio,
    "Recent progress of Ge technology for a post-Si CMOS",
    ECS Transactions 35(3) 443-456, May 2011
  • D.D. Zhao, T. Nishimura, C. H. Lee, R. Ifuku, K. Nagashio, K. Kita and A. Toriumi,
    "Junctionless Ge MOSFETs Fabricated on 10 nm-Thick GeOI Substrate",
    ECS Transactions 35(3) 457-464, May 2011
  • C. H. Lee, T. Nishimura, K. Nagashio, K. Kita and A. Toriumi,
    "High-Electron-Mobility Ge/GeO2 n-MOSFETs With Two-Step Oxidation",
    IEEE Tran. Electron Devices, vol. 58, no. 5, pp. 1295-1301, May 2011.
  • S. K. Wang, K. Kita, T. Nishimura, K. Nagashio and A. Toriumi,
    "Isotope tracing study of GeO desorption mechanism from GeO2/Ge stack using 73Ge and 18O",
    Japanese Journal of Applied Physics, 50 (2011)04DA01,
    published online Apr. 20, 2011
  • L.Q. Zhu, K. Kita, T. Nishimura, K. Nagashio, S.K. Wang, and A. Toriumi,
    "Interfacial Dipole at High-k Dielectric/SiO2 Interface: X-ray Photoelectron Spectroscopy Characteristics",
    Japanese Journal of Applied Physics, 50 (2011) 031502,
    published online Mar. 22, 2011
  • D. D. Zhao, T. Nishimura, C.H. Lee, K. Nagashio, K. Kita, and A. Toriumi,
    "Junctionless Ge p-Channel Metal-Oxide-Semiconductor Field-EffectTransistors Fabricated on Ultra-thin Ge-on-Insulator Substrate",
    Applied Physics Express, 4 (2011) 031302.

    published online Mar. 2, 2011
International Conferences
  • A. Toriumi, C. H. Lee, S. K. Wang, T. Tabata, M. Yoshida, D. D. Zhao, T. Nishimura, K. Kita, and K. Nagashio,
    "Material Potential and Scalability Challenges of Germanium CMOS", Invited
    2011 IEEE International Electron Device Meeting (IEDM2011),

    pp.646-649, (Dec. 7, 2011, Washington DC).
  • K. Nagashio, T. Moriyama, R. Ifuku, T. Yamashita, T. Nishimura, and A. Toriumi,
    "Is Graphene Contacting with Metal Still Graphene?",
    2011 IEEE International Electron Device Meeting (IEDM2011),
    pp.27-30, (Dec. 5, 2011, Washington DC).
  • S. K. Wang, K. Kita, K. Nagashio, T. Nishimura, and A. Toriumi,
    "Oxygen Vacancy Formation, Diffusion and GeO desorption in GeO2/Ge Stack",
    42th IEEE Semiconductor Interface Specialists Conference (SISC2011), (Dec.3, 2011, Arlington)
  • T. Nishimura and A. Toriumi,
    "MIGS – metal layer formation model at metal/Ge schottky barrier diode interface",
    42th IEEE Semiconductor Interface Specialists Conference (SISC2011) ,(Dec.2, 2011, Arlington)
  • C. H. Lee, T. Tabata, T. Nishimura, K. Nagashio, K. Kita, and A. Toriumi,
    "Study of Wet Etching Chemistry on Ge Surface in DIW",
    42th IEEE Semiconductor Interface Specialists Conference (SISC2011), (Dec.1, 2011, Arlington)
  • A. Toriumi, Y. Nakajima and K. Kita,
    "Opportunities for Phase-controlled Higher-k HfO2", invited,
    220th ECS Meeting, (Oct. 10, 2011, Boston)
  • A. Toriumi and K.Nagashio,
    "Material Characterization of Graphene", Invited
    28th Annual Advanced Metallization Conference 2011,(Oct.4, 2011, San Diego)
  • C. H. Lee, T. Nishimura, T. Tabata, D. D. Zhao, R. Ifuku, K. Nagashio, K. Kita, and A. Toriumi,
    "Experimental Study of Carrier Transport in Ultra-Thin Body GeOI MOSFETs",
    2011 IEEE International SOI Conference,(Oct.6, 2011, Phoenix)
  • S. Nakatsubo, T. Nishimura, K. Kita, K. Nagashio and A. Toriumi,
    "Thermodynamic Control of Interface Layer Formation in High-k Gate Stacs on 4H-SiC",
    2011 International Conference on Solid State Devices and Materials (SSDM), pp614-615.(Sep.30, 2011, Nagoya)
  • D. D. Zhao, C. H. Lee, T. Nishimura, K. Nagashio and A. Toriumi,
    "Dual Gated Germanium Junctionless p-MOSFETs",
    2011 International Conference on Solid State Devices and Materials (SSDM), pp923-924.(Sep.30, 2011, Nagoya)
  • C. H. Lee, T. Nishimura, T. Tabata, M. Yoshida, K. Nagashio, K. Kita and A. Toriumi,
    "Control of Surface Roughness on Ge by Wet Chemical Treatments and Its Effects on Electron Mobility in n-FETs",
    2011 International Conference on Solid State Devices and Materials (SSDM), pp925-926.(Sep.30, 2011, Nagoya)
  • R. Ifuku, K. Nagashio, T. Nishimura and A. Toriumi,
    "Effects of Randomly Distributed Local Dirac Points in Graphene Channel on Its FET Transfer Characteristics",
    2011 International Conference on Solid State Devices and Materials (SSDM), pp1284-1285.(Sep.30, 2011, Nagoya)
  • T. Moriyama, K. Nagashio, T. Nishimura and A. Toriumi,
    "Electrical Conductance in Graphene Contacting with Metal",
    2011 International Conference on Solid State Devices and Materials (SSDM), pp1288-1289.(Sep.30, 2011, Nagoya)
  • T. Nishimura, K. Nagashio, K. Kita and A. Toriumi,
    "A Study of Fermi-level Pinning in Ge Schottky and MIS Tunnel Junctions",
    2011 International Conference on Solid State Devices and Materials (SSDM), pp913-914.(Sep.29, 2011, Nagoya)
  • T. Tabata, C. H. Lee, T. Nishimura, S. K. Wang, K. Kita and A. Toriumi,
    "1.2 nm-EOT Al2O3 /Ge Gate Stack with GeO X-free Interface",
    2011 International Conference on Solid State Devices and Materials (SSDM), pp883-884.(Sep.28, 2011, Nagoya)
  • K. Nagashio and A. Toriumi,
    "Graphene/metal contact for graphene FET", invited,
    Advanced Metallization Conference 2011 (ADMETA 2011),
    (Sep.15, 2011, Tokyo, Shibaura tech.)

  • K. Nagashio,
    "Graphene devices: from experimental viewpoints"(Short course),
    Third international conf. on Microelectronics and Plasma Technology,

    (Jul. 4, 2011, Dalian)
  • Y. Nakajima, K. Kita, T. Nishimura, K. Nagashio, and A. Toriumi,
    "Phase Transformation Kinetics of HfO2 Polymorphs in Ultra-Thin Region",
    2011 Symposia on VLSI Technology,(Jun15, 2011, Kyoto)
  • A. Toriumi, C.H. Lee, T. Nishimura, S.K. Wang, K. Kita, and K. Nagashio,
    "Recent progress of Ge technology for a post-Si CMOS", invited,
    219th ECS Meeting, (May 4, 2011, Montreal).
  • D. Zhao, T. Nishimura, C. Lee, R. Ifuku, K. Nagashio, K. Kita and A. Toriumi,
    "Junctionless Ge MOSFETs Fabricated on 10 nm-Thick GeOI Substrate",
    219th ECS Meeting, (May 4, 2011, Montreal).
  • S. K. Wang, K. Kita, T. Nishimura, K. Nagashio, and A. Toriumi,
    "Interfacial Reaction Induced GeO Desorption, GeO2 Crystallization and Non-uniform Void Formation in GeO2/Ge Stack",
    2011 MRS Spring Meeting , (Apr. 28, 2011, San Francisco)
  • A. Toriumi, C.H. Lee, T. Nishimura, D. Zhao, S.K. Wang, K. Kita, and K. Nagashio,
    "Very High Electron and Hole Mobility in Ge MOSFETs", invited,
    2011 MRS Spring Meeting, (Apr. 27, 2011, San Francisco)
  • K. Nagashio, T. Yamashita, T. Nishimura, K. Kita, and A. Toriumi,
    "Transport properties of graphene on SiO2 with specific surface structures",
    2011 MRS Spring Meeting, (Apr. 27 ,2011, San Francisco).
  • C. H. Lee, D. D. Zhao, T. Nishimura, K. Nagashio, K. Kita, and A. Toriumi,
    "Direct Comparison of Electron and Hole Mobility in a Single GeOI MOSFET with Ge/SiO2 Interface".
    2011 International Workshop on Dielectric Thin Film for Future Electron Devices. (IWDTF2011),
    pp. 143-144. (Jan. 21, 2011, Tokyo)
  • Y. Nakajima, K. Kita, T. Nishimura, K. Nagashio, and A. Toriumi,
    "Demonstration of Very High-k HfO2 (k~50) by Suppressing Martensitic Transformation in Thin Dielectric Films"
    2011 International Workshop on Dielectric Thin Film for Future Electron Devices. (IWDTF2011),
    pp. 7-8. (Jan. 20, 2011, Tokyo)
  • T. Tabata, C. H. Lee, K. Kita, and A. Toriumi,
    "Interface Layer Scavenging and Defect Generation in LaLuO3/Ge MIS Gate Stack"
    2011 International Workshop on Dielectric Thin Film for Future Electron Devices. (IWDTF2011),
    pp. 13-14. (Jan. 20, 2011, Tokyo)
  • T. Yamashita, K. Nagashio, T. Nishimura, K. Kita, and A. Toriumi,
    "A Strong Interaction of Exfoliated Graphene with SiO2/Si Substrate"
    2011 International Workshop on Dielectric Thin Film for Future Electron Devices. (IWDTF2011),
    pp. 19-20. (Jan.20, 2011, Tokyo)
  • S. K. Wang, K. Kita, T. Nishimura, K. Nagashio, and A. Toriumi,
    "Kinetic Effects of Oxygen Vacancy Formed by GeO2/Ge Interfacial Reaction"
    2011 International Workshop on Dielectric Thin Film for Future Electron Devices. (IWDTF2011),
    pp. 31-32 . (Jan. 20, 2011, Tokyo).
  • T. Nishimura, C. H. Lee, K. Nagashio, K. Kita, and A.Toriumi,
    "Sulfur Passivation of Germanium Surface by Vapor-phase Sulfidation at Elevated Temperature".
    2011 International Workshop on Dielectric Thin Film for Future Electron Devices. (IWDTF2011),
    pp. 67-68. (Jan. 20 2011, Tokyo)
  • D. D. Zhao, T. Nishimura, C. H. Lee, K. Nagashio, K. Kita, and A. Toriumi,
    "Junctionless Ge p-MOSFETs Fabricated on Ultra-thin GeOI Substrate"
    2011 International Workshop on Dielectric Thin Film for Future Electron Devices. (IWDTF2011),
    pp. 141-142. (Jan. 20, 2011, Tokyo)


2010
Journals

  • A. Toriumi, C. H. Lee, T. Nishimura, K. Kita, S. K. Wang, M. Yoshida, and K. Nagashio
    “Feasibility of Ge CMOS for Beyond Si-CMOS"
    ECS Trans. 33 (6) 33-46 (2010).
  • K. Kita, L. Q. Zhu T. Nishimura, K. Nagashio, and A. Toriumi
    “Formation of Dipole Layers at Oxide Interfaces in High-k Gate Stacks”
    ECS Trans. 33 (6) 463-477 (2010).
  • T. Tabata, C.H.Lee, K. Kita, and A.Toriumi,
    "Direct LaLuO3/Ge Gate Stack Formation by Interface Scavenging and Subsequent Low Temperature O2 Annealing"
    ECS Trans. 33(3) 375-382(2010)
  • K. Nagashio, T. Nishimura, K. Kita, and A. Toriumi,
    "Contact resistivity and current flow path at metal/graphene contact"
    Appl. Phys. Lett., 97, 143514(2010).
  • S.K. Wang, K.Kita, C.H. Lee, T. Tabata, T.Nishimura, K. Nagashio and A.Toriumi,
    "Desorption kinetics of GeO from GeO2/Ge structure",
    Journal of Applied Physics, 108, 054104 (2010).
  • Y.Zhao, K.Kita, and A.Toriumi
    "Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices"
    Appl. Phys. Lett., 96, 242901 (2010)
    published online Jun. 15, 2010
  • L.Q. Zhu, K. Kita, T. Nishimura, K. Nagashio, S.K. Wang and A. Toriumi
    "Observation of Dipole Layer Formed at High-k Dielectrics/SiO2 Interface with X-ray Photoelectron Spectroscopy"
    Applied Physics Express, 3 (2010) 061501,
    published online May 28, 2010
  • K. Nagashio, T. Nishimura, K. Kita, and A. Toriumi,
    "Systematic Investigation of the Intrinsic Channel Properties and Contact Resistance of Monolayer and Multilayer Graphene Field-Effect Transistor"
    Japanese Journal of Applied Physics ,49 (2010) 051304
    ,
    published online May 20, 2010
  • A.Toriumi, S.K. Wang, C.H. Lee, M. Yoshida, K. Kita, T. Nishimura and K. Nagashio,
    "Oxidation, Diffusion and Desorption in Ge/GeO2 System"

    ECS Trans., 28 (2), pp.171-180 (2010).
  • Y. Nakajima, K. Kita, T. Nishimura, K. Nagashio, and A. Toriumi,
    "Experimental Demonstration of Higher-k Phase HfO2 through Non-equilibrium Thermal Treatment"
    ECS Trans., 28 (2), pp. 203-212 (2010).
  • K. Kita, A. Eika,T. Nishimura, K. Nagashio and A. Toriumi,
    "Resistive Switching Behaviors of NiO Bilayer Films with Different Crystallinity Layers"
    ECS Trans., 28 (2), pp. 315-322 (2010).
    A.Toriumi and T.Nabatame
    "Anomalous VFB Shift in High-k Gate Stacks
    - Is its origin at the top or bottom interface?-"
    ECS Trans. 25 (6) pp.3-16 (2010)
International Conferences
  • K. Nagashio, T. Yamashita, J. Fujita, T. Nishimura, K. Kita and A. Toriumi,
    “Impacts of graphene/SiO2 interaction on FET mobility and Raman spectra in mechanically exfoliated graphene films”,
    2010IEEE International Electron Device Meeting(IEDM2010), pp.564-567.(Dec. 7, 2010, San Francisco).
  • C.H. Lee, T. Nishimura, T. Tabata, S.K. Wang, K. Nagashio, K. Kita and A. Toriumi,
    “Ge MOSFETs Performance: Impact of Ge Interface Passivation”, 2010IEEE International Electron Device Meeting(IEDM2010), pp.416-419.(Dec. 7, 2010, San Francisco).
  • M. Yoshida, K. Kita, K. Nagashio, T. Nishimura and A. Toriumi,
    “Oxidation Sensitive LO-phonon Mode of GeO2 in Initial Oxidation Regime of Ge”,
    41th IEEE Semiconductor Interface Specialists Conference International(SISC2010)(Dec. 3, 2010, San Diego).
  • K. Kita,
    “Understanding of GeO2 Material Properties for Advanced Ge MIS Stacks”, Invited
    41th IEEE Semiconductor Interface Specialists Conference International(SISC2010)(Dec. 3, 2010, San Diego).
  • T. Tabata, C. H. Lee, T. Nishimura, K. Kita and A. Toriumi,
    “Impact of Low Temperature O2 Annealing for Stabilizing LaLuO3/Ge Gate Stacks without Additional Interface Layer Formation”,
    41th IEEE Semiconductor Interface Specialists Conference International(SISC2010)(Dec. 2, 2010, San Diego).
  • S. K. Wang, K. Kita, T. Nishimura, K. Nagashio and A.Toriumi,
    “Crystallization of Thick Amorphous GeO2 on Ge to α-quartz Structure - Experimental Evidence and Crystallization Model”,
    41th IEEE Semiconductor Interface Specialists Conference International(SISC2010)(Dec. 2, 2010, San Diego).
  • A.Toriumi,
    "Graphene Interfaces", invited
    Dasan Conference on Graphene(Nov.10, 2010,Jeju).
  • T. Tabata, C. H. Lee, K. Kita, and A. Toriumi,
    "Direct LaLuO3/Ge Gate Stack Formation by Interface Layer Scavenging and Subsequent Low Temperature O2 Annealing", 
    The 218th Electrochemical Society Meeting (Oct. 13, 2010, Las Vegas)
  • K. Kita, L. Q. Zhu T. Nishimura, K. Nagashio, and A. Toriumi,
    “Formation of Dipole Layers at Oxide Interfaces in High-k Gate Stacks”, Invited
    The 218th Electrochemical Society Meeting (Oct. 12, 2010, Las Vegas)
  • A. Toriumi, C. H. Lee, T. Nishimura, K. Kita, S. K. Wang, M. Yoshida, and K. Nagashio, Invited,
    “Feasibility of Ge CMOS for Beyond Si-CMOS",
    The 218th Electrochemical Society Meeting (Oct. 11, 2010, Las Vegas)
  • M. Yoshida, T. Nishimura, C. H. Lee, K. Kita, K. Nagashio and A. Toriumi,
    "TO- and LO-mode analyses in asymmetric stretching vibrations in ultra thin thermally grown GeO2 on Ge substrate",
    2010 International Conference on Solid State Devices and Materials(SSDM), pp1002-1003.(Sep.24, 2010, Tokyo)
  • D. D. Zhao, C. H. Lee, T. Nishimura, K. Nagashio, K. Kita, A. Toriumi,
    "Electron and hole mobility comparison in a single Ge-MOSFET fabricated on 50 nm-thick GeOI substrate",
    2010 International Conference on Solid State Devices and Materials(SSDM), pp303-304.(Sep.23, 2010, Tokyo)
  • Y. Nakajima, K. Kita, T. Nishimura, K. Nagashio and A. Toriumi,
    "Stability origin of metastable higher-k phase HfO2 at room temperature",
    2010 International Conference on Solid State Devices and Materials(SSDM), pp687-688.(Sep.23, 2010, Tokyo)
  • T. Yamashita, J. Fujita, K. Nagashio, T. Nishimura, K. Kita and A. Toriumi,
    "Impact of Surface Treatment of SiO2/Si Substrate on Mechanically Exfoliated Graphene",
    2010 International Conference on Solid State Devices and Materials(SSDM), pp896-897.(Sep.23, 2010, Tokyo)
  • K. Nagashio, T. Nishimura, K. Kita and A. Toriumi,
    "DOS Bottleneck for Contact Resistance in Graphene FETs", invited
    2010 International Conference on Solid State Devices and Materials(SSDM), pp884-885.(Sep.23, Tokyo, 2010)
  • C. H. Lee, T. Nishimura, T. Tabata, S. Wang, K. Nagashio, K. Kita, and A. Toriumi,
    "Advantage of High-pressure Oxidation for Ge/GeO2 Stack Formation",
    2010 International Conference on Solid State Devices and Materials(SSDM), pp25-26.(Sep.22, 2010, Tokyo)
  • F. I. Alzakia, K. Kita, T. Nishimura, K. Nagashio and A. Toriumi,
    "Effects of GeO2-Metal Interaction on VFB of GeO2 MIS Gate Stacks",
    2010 International Conference on Solid State Devices and Materials(SSDM), pp29-30.(Sep.22, 2010, Tokyo)
  • S. K. Wang, K. Kita, T. Nishimura, K. Nagashio and A. Toriumi,
    "GeO Desorption Mechanism from GeO2/Ge Stack Determined by 73Ge Labeling Technique in Thermal Desorption Spectroscopy (TDS) Analysis",
    2010 International Conference on Solid State Devices and Materials(SSDM), pp35-36.(Sep.22, 2010, Tokyo)
  • A. Toriumi,
    "Will Germanium Be Back ?", invited,
    IUMRS-ICEM2010,(Aug. 23, 2010, Seoul)
  • T. Nishimura, C.H. Lee, S.K. Wang, T. Tabata, K. Kita, K. Nagashio, and A. Toriumi,
    "Electoron Mobility in High-k Ge MISFETs Goes up to Higher."
    2010 Symposium on VLSI Technology Digest of Technical Papers,p.209 , (Jun. 17, 2010, Honolulu)
  • T. Nishimura, K. Kita, K. Nagashio, and A. Toriumi,
    "Long Range Pinning Interaction in Ultra-thin Insulator-inserted Metal/Germanium Junctions."
    2010 Silicon Nanoelectronics Workshop, p.19(Jun. 13, 2010, Tokyo)
  • A.Toriumi,
    "Can Germanium be Beyond Silicon in Performance ?", invited
    5th ISTDM,(May 26, 2010, Stockholm)
  • A. Toriumi,
    "Design of Interfacing Fields for Advanced Electron Devices", invited
    Extended Abstracts on International Symposium on Technology Evolution for
    Silicon Nano-Electronics (ISTESNE), p.6 (Jun. 3, 2010, Tokyo)
  • K. Kita, A. Eika, T. Nishimura, K. Nagashio, and A. Toriumi,
    "Resistive Switching in NiO Bilayer Films with Different Crystallinity Layers"
    Extended Abstracts on International Symposium on Technology Evolution for
    Silicon Nano-Electronics (ISTESNE), p.83 (Jun. 4, 2010, Tokyo).
  • A.Toriumi,
    "Can Germanium be Beyond Silicon in Performance ?", invited
    5th ISTDM,(May 26, 2010, Stockholm)
  • A.Toriumi, S.K. Wang, C.H. Lee, M. Yoshida, K. Kita, T. Nishimura and K. Nagashio,
    "Oxidation, Diffusion and Desorption in Ge/GeO2 System", invited

     217th ECS Meeting, (Apr. 27, 2010, Vancouver).
  • Y. Nakajima, K. Kita, T. Nishimura, K. Nagashio, and A. Toriumi,
    "Experimental Demonstration of Higher-k Phase HfO2 through Non-equilibrium Thermal Treatment"

     217th ECS Meeting, (Apr. 27, 2010, Vancouver).
  • K. Kita, A. Eika,T. Nishimura, K. Nagashio and A. Toriumi,
    "Resistive Switching Behaviors of NiO Bilayer Films with Different Crystallinity Layers"
     217th ECS Meeting, (Apr. 27, 2010, Vancouver).
  • K. Nagashio, T. Nishimura, K. Kita, and A. Toriumi,
    "Current crowding at metal contacts in graphene FETs",
     2010 MRS Spring Meeting, (Apr. 7 ,2010, San Francisco).


2009
Journals
  • A.Toriumi and T.Nabatame
    "Anomalous VFB Shift in High-k Gate Stacks
    - Is its origin at the top or bottom interface?-"
    ECS Trans. 25 (6) pp.3-16 (2009).
  • C. H. Lee, T. Tabata, T. Nishimura, K. Nagashio, K. Kita,
    and A. Toriumi,
    "Ge/GeO2 Interface Control with High-Pressure Oxidation for Improving Electrical Characteristics"
    Appl.Phys. Express 2 (2009) 071404
    .
  • K. Nagashio, C. H. Lee, T. Nishimura, K. Kita, and A. Toriumi,
    "Thermodynamics and kinetics for suppression of GeO desorption by high pressure oxidation of Ge"
    Mater. Res. Soc. Symp. Proc., (2009) 1155, C06-02.
  • T. Yokoyama, C. B. Park, K.Nagashio, K. Kita, and A. Toriumi,
    ”Grain size increase in pentacene thin films prepared in low-pressure gas ambient”
    Thin Solid Films, Vol.518(2) pp. 507-509(2009)
  • A.Dimoulas,A.Toriumi and S.E.Mohney
    "Source and Drain Contacts for Germanium and III-V FETs for Digital Logic"
    MRS BULLETIN,VOL.34,pp.522-529,(Jul.2009).
  • A.Toriumi,T.Tabata,C.H.Lee,T.Nishimura,K.kita and K.Nagashio
    "Opportunities and challenges for Ge CMOS-Control of interfacing field on Ge is a key(Invited Paper)"
    Microelectronic Engineering86(2009)1571-1576.
  • K.Kita,C.H.Lee,T.Nishimura,K.Nagashio and A.Toriumi
    "Control of Properties of GeO
    2 Films and Ge/ GeO2 Interfaces by the Suppression of GeO Volatilization"
    ECS Trans. 19 (2) pp.101-116 (2009).
  • C.H.Lee,T.Tabata,T.Nishimura,K.Nagashio,K.Kita and A.Toriumi
    "Ge/GeO
    2 Interface Control with High Pressure Oxidation for Improving Electrical Characteristics"
    ECS Trans. 19 (1) pp.165-173 (2009).
  • A.Toriumi andK.Kita
    "On the Origin of anomalous V
    TH shift in high-k MOSFETs"
    ECS Trans. 19 (1) pp.243-252 (2009).
  • K.Nagashio, T. Nishimura, K. Kita, and A. Toriumi,
    "Mobility Variations in Mono- and Multi-Layer Graphene Films"
    Appl. Phys. Express 2, 025003 (2009).

  • T. Nishimura, S. Sakata, K. Nagashio, K. Kita, and A. Toriumi,
    "Low Temperature Phosphorus Activation in Germanium through Nickel Germanidation for Shallow n+/p Junction"
    Appl. Phys. Express 2, 021202 (2009).

  • K.Kita and A.Toriumi,
    "Origin of Electric Dipoles Formed at High-k/SiO2 Interface"

    Appl. Phys. Lett . 94, 132902 (2009).
  • Y. Zhao, K. Kita, K.Kyuno,and A. Toriumi,
    "Dielectric and electrical properties of amorphous La1.xTaxOy films as higher-k gate insulators"
    J.Appl. Phys. 105 (2009) 034103.
  • Y. Zhao, K. Kita, K.Kyuno,and A. Toriumi,
    "Band gap enhancement and electrical properties of La2O3 films doped with Y2O3 as high-k gate insulators"
    Appl. Phys.Letters 94 (2009) 042901.
International Conferences
  • S.K. Wang, K. Kita, C.H. Lee, T. Tabata, K. Nagashio, T. Nishimura and A. Toriumi
    "Kinetic Study of GeO Desorption from Ge/GeO2 system,"
    40th IEEE Semiconductor Interface Specialists Conference International(SISC2009)(Dec. 2009, Arlington)
  • M. Yoshida, K. Kita, K. Nagashio, T. Nishimura and A. Toriumi
    "Sub-gap Formation and Its Annihilation in Energy Band Gap of GeO2 by Changing O2 Pressure in PDA Process"
    40th IEEE Semiconductor Interface Specialists Conference International(SISC2009)(Dec. 2009, Arlington)
  • T. Tabata, C.H. Lee, K. Kita and A. Toriumi
    "Local GeO2 Doping at LaLuO3/Ge Interface for Direct High-k/Ge Gate Stacks"
    40th IEEE Semiconductor Interface Specialists Conference International(SISC2009)(Dec. 2009, Arlington)
  • K. Nagashio, T. Nishimura, K. Kita and A. Toriumi
    "Metal dependent contact properties in graphene FETs"
    40th IEEE Semiconductor Interface Specialists Conference International(SISC2009)(Dec. 2009, Arlington)
  • Y. Chikata, K. Kita, T. Nishimura, K. Nagashio and A. Toriumi
    "XPS Analysis of High-k/SiO2/Si Stacks through Grounded Gate Metal - Estimation of Energy Levels of Electronic Structures of High-k Dielectric Films"
    40th IEEE Semiconductor Interface Specialists Conference International(SISC2009)(Dec. 2009, Arlington)
  • C.H. Lee, T. Nishimura, N. Saido, K. Nagashio, K. Kita, and A. Toriumi
    " Record-high Electron Mobility in Ge n-MOSFETs Exceeding Si Universality"
    2009IEEE International Electron Device Meeting(IEDM),pp.457-460.(Dec.2009,Baltimore).
  • K. Nagashio, T. Nishimura, K. Kita and A. Toriumi
    "Metal/Graphene Contact as a Performance Killer of Ultra-high Mobility Graphene - Analysis of IntrinsicMobility and Contact Resistance -"
    2009IEEE International Electron Device Meeting(IEDM),pp.565-568.(Dec.2009,Baltimore).
  • K. Kita, S.K. Wang, M. Yoshida, C.H. Lee, K. Nagashio, T.Nishimura and A.Toriumi
    "Comprehensive Study of GeO2 Oxidation, GeO Desorption and GeO2-Metal Interaction . Understanding of Ge Processing Kinetics for Perfect Interface Control-"
    2009IEEE International Electron Device Meeting(IEDM),pp.693-696.(Dec.2009,Baltimore).
  • A.Toriumi and T.Nabatame
    "Anomalous VFB Shift in High-k Gate Stacks
    - Is its origin at the top or bottom interface?-"
    216 th The Electrochemical Society Meeting(October 2009, Vienna)(Invited)
  • L. Q. Zhu, K. Kita, T. Nishimura, K. Nagashio, S. K. Wang and A. Toriumi,
    "X-ray photoelectron spectroscopy study of dipole effects at HfO2/SiO2/Si stacks"
    Int. conf. on Solid State Devices and Materials, (October 2009,Sendai)
  • T. Tabata, K. Kita and A. Toriumi,
    "Study of La-doped GeO2 Films from Defect Annihilation Viewpoint"
    Int. conf. on Solid State Devices and Materials, (October 2009,Sendai)
  • C. H. Lee, T. Nishimura, T. Tabata, K. Nagashio, K. Kita and A. Toriumi,
    "High Electron Mobility Ge n-Channel MOSFETs with GeO2 grown by High Pressure Oxidation"
    Int. conf. on Solid State Devices and Materials, (October 2009,Sendai)
  • S. Wang, K. Kita, T. Nishimura, K. Nagashio and A. Toriumi1
    "18O isotope tracing of GeO Desorption from GeO2/Ge Structure"
    Int. conf. on Solid State Devices and Materials, (October 2009,Sendai)
  • T. Yokoyama, C. B. Park, K. Nagashio, K. Kita, and A. Toriumi
    "Enhancing mobility in pentacene TFTs using the film deposition in H2 on octadecyltrichlorosilane (OTS) treated SiO2"
    Int. conf. on Solid State Devices and Materials, (October 2009,Sendai)
  • K. Kita, M. Yoshida, T. Nishimura, K. Nagashio and A. Toriumi,
    "Spectroscopic Ellipsometry Study on Defects Generation in GeO2/Ge stacks",
    Int. conf. on Solid State Devices and Materials, (October 2009,Sendai)
  • K. Nagashio, T. Nishimura, K. Kita and A. Toriumi
    "Study of metal/graphene contact with different electrode geometry"
    Int. conf. on Solid State Devices and Materials, (October 2009,Sendai)
  • A.Toriumi
    "Material Science of Metal/High-k Gate Stack for Advanced CMOS”
    1st International Workshop on Si based nano-electronics and -photonics (September 2009, Vigo) (invited)
  • A.Toriumi,T.Tabata,C.H.Lee,T.Nishimura,K.Kita and K.Nagashio,
    "Opportunities and Challenges for Ge CMOS -Control of interfacing fields on Ge is a key-",
    INFOS2009(Jun.2009,Cambridge)(Invited)
  • K. Kita, C. H.Lee, T. Nishimura, K. Nagashio, and A. Toriumi,
    "Control of Properties of GeO2 Films and Ge/GeO2 Interfaces by the Suppression of GeO Volatilization",
    215 th Meeting, The Electrochemical Society (May 2009, San Francisco)
    (Invited)
  • C. H.Lee, T. Tabata, T. Nishimura, K.Nagashio, K. Kita and A. Toriumi ,
    "Ge/GeO2 Interface Control with High Pressure Oxidation for Improving Electrical Characteristics",
    215 th Meeting, The Electrochemical Society (May 2009, San Francisco)
  • A. Toriumi and K. Kita,
    "On the Origin of Anomalous VTH Shift in high-k MOSFETs",
    215 th Meeting, The Electrochemical Society (May 2009, San Francisco)
    (Invited)
  • A.Toriumi,
    "Materials Science in Metal/High-k Gate Stacks for Much More Moore CMOS",
    INC-5(May 2009,Los Angeles)(Invited)
  • K. Nagashio, T. Nishimura, K. Kita, and A. Toriumi,
    "Thermodynamics and kinetics for suppression of GeO desorption by high pressure oxidation of Ge",
    MRS spring meeting, (Apr.2009, San Francisco)
  • A.Toriumi,
    "On the Origin of anomalous VTH shift in high-k MOSFETs" ,
    Nonstoichiometric Compounds,(Mar.2009,Jeju)
    (
    Invited)


2008

Journals

  • K. Kita, C. H. Lee, T. Nishimura, K. Nagashio, and A. Toriumi, "Study of Kinetic Behaviors of GeO in GeO2/Ge Stacks"
    ECS Trans. 16 (5) pp.187-194 (2008).
  • T. Tabata, C. H. Lee, K. Kita, and A. Toriumi, "Impact of High Pressure O2 Annealing on Amorphous LaLuO3/Ge MIS Capacitors"
    ECS Trans. 16 (5) pp.479-486 (2008).
  • C. B. Park, T. Yokoyama, T. Nishimura, K. Kita, and A. Toriumi
    "Molecular ordering and interface state modification for reducing bias-induced threshold voltage shift in pentacene field-effect transistors"
    J. Electrochem. Soc. 155 (2008) H575-H581.
  • K. Kita, T. Takahashi, H. Nomura, S. Suzuki, T. Nishimura, and A. Toriumi
    "Control of high-k/germanium interface properties through selection of high-k materials and suppression of GeO volatilization"
    Appl. Surf. Sci. 254 (2008) 6100.
  • T. Nishimura, K. Kita, and A. Toriumi
    " A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film "
    Appl. Phys. Express 1 (2008) 051406.
  • T. Yokoyama, C. B. Park, T. Nishimura, K. Kita, and A. Toriumi
    "Oxygen-Related Degradation Mechanisms for On- and Off-States of Perfluoropentacene Thin-Film Transistors"
    Jpn. J. Appl. Phys. 47 (2008) 3643.
  • K. Kita, S.Suzuki, H. Nomura, T. Takahashi, T. Nishimura, and A. Toriumi
    "Direct Evidence of GeO Volatilization from GeO2/Ge and Impact of Its Suppression on GeO2/Ge Metal-Insulator-Semiconductor Characteristics"
    Jpn. J. Appl. Phys. 47 (2008) 2349.
  • J. Widiez, K. Kita, K. Tomida, T. Nishimura, and A. Toriumi
    "Internal Photoemission over HfO2 and Hf(1-x)SixO2 High-k Insulating Barriers: Band Offset and Interfacial Dipole Characterization "

    Jpn. J. Appl. Phys. 47 (2008) 2410.
  • C. B. Park, T. Yokoyama, T. Nishimura, K. Kita, and A. Toriumi,
    "Threshold-Voltage-Shift Mechanism in Pentacene Field Effect Transistors Caused by Photoirradiation "
    Jpn. J. Appl. Phys. 47 (2008) 3189.
  • T. Yokoyama, C. B. Park, K. Nagashio, K. Kita, and A. Toriumi,
    "Grain Size Increase and Field-Effect Mobility Enhancement of Pentacene Thin Films Prepared in a Low-Pressure H2 Ambient"
    Appl. Phys. Express 1 (2008) 041801.

International Conferences
  • A.Toriumi,
    "Physical Model of V
    TH Instability in High-k MOSFETs"
    SISC(Dec. 2008, San Diego)
    (Invited)
  • K..Kita and A.Toriumi
    "Intrinsic Origin of Electric Dipoles Formed at High-k/SiO2 Interface"Tech.Dig. of 2008IEEE International Electron Device Meeting(IEDM),pp.29-32.(Dec.2008,SanFrancisco)
  • T. Yokoyama, C. B. Park, K. Nagashio, K. Kita, and A. Toriumi
    "Grain Size Enhancement and Its Mechanism in Pentacene Thin Films Grown in a Low-Pressure Gas Ambient" The 8th International Conference on Nano-molecular Electronics (ICNME 2008), pp. 96-97 (Dec. 2008, Kobe)
  • T. Yokoyama, C. B. Park, K. Nagashio, K. Kita, and A. Toriumi
    "Grain Size Enhancement Mechanism in Pentacene Thin Films Prepared in a Low-Pressure Gas Ambient" International Symposium on Flexible Electronics and Display (ISFED 2008), pp. 76-77 (Nov. 2008, Hsinchu, Taiwan)
  • K. Nagashio, T. Nishimura, K. Kita, and A. Toriumi,
    " Temperature dependent transport in mono- and multi-layer graphene films",
    Int. symp. on Graphene Devices, (Nov.2008, Aizu-Wakamatsu)
  • T. Tabata, C. H. Lee, K. Kita, and A. Toriumi
    "Importance of Ge-Friendly High-k Material Selection for Ge MIS Gate Dielectrics"
    Extended Abstracts of 2008 International Workshop on Dielectric Thin Film for Future ULSI Devices. (IWDTF2008), pp. 11-12 (Nov. 2008, Tokyo)
  • T. Nishimura, C. H. Lee, K. Kita, K. Nagashio, and A. Toriumi
    "Study of Electron Mobility of Ge n-MOSFETs with High Pressure Oxidized GeO2"
    Extended Abstracts of 2008 International Workshop on Dielectric Thin Film for Future ULSI Devices. (IWDTF2008), pp. 81-82 (Nov. 2008, Tokyo)
  • K. Nagashio, K. Kita, C. H. Lee, T. Nishimura, and A. Toriumi
    "Thermodynamics and Kinetics of Thermal Oxidation of Ge in High Pressure Oxygen"
    Extended Abstracts of 2008 International Workshop on Dielectric Thin Film for Future ULSI Devices. (IWDTF2008), pp. 149-150 (Nov. 2008, Tokyo)
  • K. Kita, C. Lee, T. Nishiumura, K. Nagashio, and A. Toriumi
    "Study of Kinetic Behaviors of GeO in GeO2/Ge Stacks"
    Pacific Rim Meeting on Electrochemical and Solid-State Science (PRIME) (Oct. 2008, Honolulu) (invited)
  • T. Tabata, C. Lee, K. Kita, and A. Toriumi
    "Impact of High Pressure O2 Annealing on Amorphous LaLuO3/Ge MIS Capacitors"
    Pacific Rim Meeting on Electrochemical and Solid-State Science (PRIME) (Oct. 2008, Honolulu)
  • A.Toriumi,T.Nabatame and H.Ota
    "Application of Advanced Atomic Layer Deposition for Understanding and Control of V
    TH and EOT in Metal/High-k Gate Stacks"
    ECS PRiME (Oct. 2008, Honolulu)
    (Invited)
  • K. Kita, T.Nishimura, K. Nagashio, and A. Toriumi,
    "Control of interface properties of high-k/Ge with GeO2 interface layer."
    Extended Abstracts of 2008 International Conference on Solid State Devices and Materials (SSDM), pp.8-9 (Sep. 2008, Tsukuba)(invited)
  • T. Tabata, K. Kita, and A. Toriumi,
    "Amorphous high-k LaLuO3 dielectric film for Ge MIS gate stack."
    Extended Abstracts of 2008 International Conference on Solid State Devices and Materials (SSDM), pp.14-15 (Sep. 2008, Tsukuba)
  • C. H. Lee, T. Nishimura, K. Nagashio, K. Kita, and A. Toriumi,
    "Reaction kinetics control on thermal oxidation process of Ge in high pressure oxygen."
    Extended Abstracts of 2008 International Conference on Solid State Devices and Materials (SSDM), pp.16-17 (Sep. 2008, Tsukuba)
  • K. Nagashio, T. Nishimura, K. Kita, and A. Toriumi,
    "Optical identification and electrical characterization of graphene transferred from natural graphite on thinner (90nm-thick) SiO2."
    Extended Abstracts of 2008 International Conference on Solid State Devices and Materials (SSDM), pp.316-317 (Sep. 2008, Tsukuba)
  • T. Nishimura, S. Sakata, K. Nagashio, K. Kita, and A. Toriumi,
    "Low temperature phosphorus segregation at NiGe/Ge interface by snowplow effect."
    Extended Abstracts of 2008 International Conference on Solid State Devices and Materials (SSDM), pp.688-689 (Sep. 2008, Tsukuba)
  • A. Toriumi, K.Kita,S.Migita and Y.Watanabe
    "Phase Controlled HfO
    2 for Higher-k Dielectrics"
    Higher-k Workshop(Aug.2008,Stanford) (invited)
  • A. Toriumi,
    "Interface properties of Ge with dielectric films and metals"
    NSC-JST WSP(Jul.2008,Taiwan) (invited)
  • A. Toriumi,
    "On the control of GeO2/Ge and metal/Ge interfaces toward metal source/drain Ge CMOS."
    JST-DFG Joint WSP(Mar. 2008,Aachen) (invited)
  • A. Toriumi, T. Nishimura, T. Takahashi, and K. Kita,
    "On the control of GeO2/Ge and metal/Ge interfaces for metal source/drain Ge CMOS."MRS San Francisco, March 2008 (invited)

2007

Publication

  • A.Toriumi,K.Kita,M.Toyama and H.Nomura,
    "Interface Properties of High-k Dielectrics on Germanium",in "Advanced Gate Stacks for High-Mobility Semiconductors",ed.by A.Dimoulas,E.Gusev,P.c.Mclntyre and M.Heyns
    ,pp.257-267(2007,Springer)
  • A. Toriumi,
    "Current Status and Perspective of High-k Gate Stack
    Materials Engineering for Further Scaled CMOS"
    ECS Trans.11(6) pp.3-16 (2007)

  • K. Kita, S. Suzuki, H. Nomura, T. Takahashi, T. Nishimura and A. Toriumi, "Dramatic Improvement of GeO2/Ge MIS Characteristics by Suppression of GeO Volatilization," ECS Trans. 11 (4) pp.461-469 (2007)

  • A. Toriumi and K. Kita,
    "Material Engineering of High-k Gate Dielectrics", Dielectric Films for Advanced Microelectronics, M.Baklanov, M.Green and K.Maex (ed.),
    John Wiley & Sons, Ltd, pp.297-336 (2007)
  • Y. Zhao, K. Kita, K. Kyuno, and A. Toriumi.
    "Mechanisms of and Solutions to Moisture Absorption of Lanthanum Oxide as High k Gate Dielectric"
    ECS Trans. 6 (1) 141 (2007)


Journals

  • Y.Yamamoto, K.Kita, K.Kyuno and A.Toriumi,
    "Study of La-Induced Flatband Voltage Shift in Metal/HfLaOx/SiO2/Si Capacitors"
    Jpn. J. Appl. Phys. 46 (11)7251-7255 (2007)

  • T. Nishimura, K. Kita, and A. Toriumi
    "Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface" Appl. Phys. Lett. 91, 123123 (2007)

  • Y. Zhao, K. Kita, K. Kyuno, and A. Toriumi, "Suppression of Leakage Current and Moisture Absorption of La2O3 Films with Ultraviolet Ozone Post Treatment", Jpn. J. Appl. Phys. Pt.1, 46(7), 4189(2007).

International Conferences

  • T. Takahashi, T. Nishimura, L. Chen, S. Sakata, K. Kita and A. Toriumi
    "Proof of Ge-Interfacing Concepts for Metal/High-k/Ge CMOS -Ge-intimate Material Selection and Interface Conscious Process Flow"
    2007 International Electron Device Meeting (IEDM), pp. 697-700 (Dec.2007,Washington DC)

  • A. Toriumi, K. Kita, K. Tomida, Y. Zhao, J. Widiez, T. Nabatame, H. Ota and M. Hirose
    "Materials Science-based Device Performance Engineering for Metal Gate High-k CMOS"
    2007 International Electron Device Meeting (IEDM), pp. 53-56
    (Dec.2007,Washington DC) (invited)

  • T. Nishimura, K.Kita, A. Toriumi
    "A Significant Shift of Strongly Pinned Charge Neutrality Level at Metal/Germanium Interface by Inserting Ultra-thin Oxides"
    38th IEEE Semiconductor Interface Specialists Conference International(SISC2007)(Dec. 2007, Arlington)

  • K. Kita, T.Takahashi, H.Nomura, S.Suzuki, T.Nishimura, A.Toriumi
    "Control of High-k / Ge Interface Properties through Selection of High-k Materials and Suppression of GeO Volatilizaiton" Fifth International Symposium on Control of Semiconductor Interface(ISCSI-V) Extended Abstracts and Program pp. 249-250
    (Tokyo, Nov 2007) (Invited)

  • T. Nishimura, K. Kita, and A. Toriumi
    "Control of Fermi-Level Pinning at Metal/Germanium Interface by Inserting Ultra-thin Oxides" Fifth International Symposium on Control of Semiconductor Interface(ISCSI-V) Extended Abstracts and Program pp. 67-68 (Tokyo, Nov 2007)

  • A.Toriumi, T.Nishimura, K.Kita
    "On the control of GeO2/Ge and metal/Ge interfaces"
    3rd International WorkShop on New Group IV Semiconductor Nanoelectronics
    (Sendai, Nov 2007)(Invited)

  • A.Toriumi, K.Kita, T.Nishimura, and Toshitake Takahashi
    "Interfacing Control of Dielectric Films and Metals on Germanium for CMOS Application"
    The 34th International Symposium on Compound Semiconductors (Kyoto, Oct. 2007) (Invited)

  • A. Toriumi,
    "Current Status and Perspective of High-k Gate Stack
    Materials Engineering for Further Scaled CMOS"
    212th Electrochemical Society Meeting (Washington DC, Oct.2007) (Invited)

  • K. Kita, S. Suzuki, H. Nomura, T. Takahashi, T. Nishimura
    and A. Toriumi,
    "Dramatic Improvement of GeO2/Ge MIS Characteristics
    by Suppression of GeO Volatilization,"
    212th Electrochemical Society Meeting (Washington DC, Oct.2007)

  • A.Toriumi,
    "High-k dielectric films for advanced microelectronics"
    International Conference <Micro- and Nanoelectronics2007>
    (Moscow-Zvenigorod, Oct. 2007) (Invited)

  • S. Suzuki, K. Kita, H. Nomura, T. Nishimura, and A. Toriumi
    "Direct Evidence of GeO Volatilization from GeO2 Films and Impact of Its Suppression on GeO2/Ge MIS Characteristics." Extended Abstracts of 2007 International Conference on Solid State Devices and Materials (SSDM), pp.20-21 (Sep. 2007, Tsukuba)

  • T. Takahashi, and Y. Zhao, T. Nishimura, K. Kita, and A. Toriumi
    "Thermally Robust Germanium MIS Gate Stacks with LaYO3 Dielectrics Films." Extended Abstracts of 2007 International Conference on Solid State Devices and Materials (SSDM), pp.26-27 (Sep. 2007, Tsukuba)

  • T. Nishimura, K. Kita, and A. Toriumi
    "Effect of Ultra-thin Al2O3 Insertion on Fermi-level Pinning at Metal/Ge Interface." Extended Abstracts of 2007 International Conference on Solid State Devices and Materials (SSDM), pp.842-843 (Sep. 2007, Tsukuba)

  • J. Widiez, K. Kita, T. Nishimura, and A. Toriumi
    "Advanced Characterization of High-k Gate Stack by Internal Photo Emission(IPE) : Interfacial Dipole and Band Diagram in Al/Hf(Si)O2/Si MOS Structure. " Extended Abstracts of 2007 International Conference on Solid State Devices and Materials (SSDM), pp.1028-1029 (Sep. 2007, Tsukuba)

  • K. Tomida, K. Kita and, A. Toriumi
    "Origin of Structural Phase Transformation of SiO2-doped HfO2" Extended Abstracts of 2007 International Conference on Solid State Devices and Materials (SSDM), pp.1032-1033 (Sep. 2007, Tsukuba)

  • T. Yokoyama, C. B. Park, Y. Kikuchi, T. Nishimura, K. Kita and, A. Toriumi
    "Mobility Improvement of Pentacene Thin Film Transistors by Introduction of H2 during Evaporation." Extended Abstracts of 2007 International Conference on Solid State Devices and Materials (SSDM), pp.1092-1093 (Sep. 2007, Tsukuba)

  • C. B. Park, T. Yokoyama,T. Nishimura, K. Kita, and A. Toriumi
    "Evidence of Electron Trapping Center at Pentacene/SiO2 Interface." Extended Abstracts of 2007 International Conference on Solid State Devices and Materials (SSDM), pp.1094-1095 (Sep. 2007, Tsukuba)

  • A. Toriumi, H. Nomura, S. Suzuki, T. Nishimura, and K. Kita "Interface Properties of Ge with Dielectrics and Metals" 5th International Conference on Silicon Epitaxy and Heterostructures (ICSI), (May. 2007, Marseille) (Invited)

  • A.Toriumi and K.Kita "Ternary High-k Dielectrics for Advanced CMOS" International Workshop on High-k Dielectrics on High Electron Mobility Channel Materials, (May 2007 National Tsing Hua Univ. ,Taiwan) (Invited)

  • A.Toriumi, K.Kita and T.Nishimura "High-k Dielectrics and Metals on Germanium" International Workshop on High-k Dielectrics on High Electron Mobility Channel Materials, (May 2007 National Tsing Hua Univ. ,Taiwan) (Invited)

  • Y. Zhao, K. Kita, K. Kyuno, and A. Toriumi. "Mechanisms of and Solutions to Moisture Absorption of Lanthanum Oxide as High k Gate Dielectric" 211th Meeting of The Electrochemical Society (ECS), (May. 2007, Chicago).

  • A.Toriumi,
    "Ternary Oxides for Advanced CMOS Gate Dielectrics",
    International Workshop on Advanced Materials and Technologies for Nano and Oxide Electronics, India Habitat Centre (Feb. 2007, New Delhi) (Invited)

  • T. Yokoyama, C.B. Park, T. Nishimura, K. Kita, K. Kyuno and A. Toriumi,
    "Study of Mobility Limitation Factors in Pentacene Thin Film Transistors", 4th International Conference on Molecular Electronics and Bioelectronics (M&BE4), p.77 (Mar. 2007, Tokyo)

2006
Journals

1)K. Yamamura, K. Kita, A. Toriumi and K. Kyuno,
"Reversible Creation and Annihilation of a Local Leakage Path in HfO2/GeOx Stacked Gate Dielectrics : A Direct Observation by Ultrahigh Vacuum Conducting Atomic Force Microscopy" Appl. Phys. Lett. 89 (22), 222101 (2006).

2)Y.Zhao, K.Kita, K.Kyuno and A.Toriumi "Higher-k LaYOx films with strong moisture resistance" Appl. Phys. Lett. 89, 252905 (2006)

3)K. Kita, H. Nomura, T. Nishimura and A. Toriumi, " Impact of Dielectric Material Selection on Electrical Properties of High-k/Ge Devices," ECS Trans. 3 (3) 71 (2006).

4)K. Tomida, K. Kita, A. Toriumi, "Dielectric constant enhancement due to Si incorporation into HfO2." Appl. Phys. Lett.89, 142902 (2006).

5)A. Toriumi, K. Kita, K. Tomida, and Y. Yamamoto, "Doped HfO2 for Higher-k Dielectrics," ECS Trans. 1 (5), 185-197 (2006).

6)Y. Yamamoto, K. Kita, K. Kyuno and A. Toriumi, "Structural and Electrical Properties of HfLaOx Films for an Amorphous High-k Gate Insulator," Appl. Phys. Lett. 89, 032903 (2006).

7)Y. Zhao, M. Toyama, K. Kita, K. Kyuno and A. Toriumi, "Moisture-absorption-induced permittivity deterioration and surface roughness enhancement of lanthanum oxide films on silicon," Appl. Phys. Lett. 88 072904 (2006)

International Conferences
1)A.Toriumi, K. Kita, and H.Irie,
"Novel Approach to MOS Inversion Layer Mobility Characterization with Advanced Split C-V and Hall Analysis", 2006 IEEE Int.Electron Devices Meeting (IEDM), pp.671-674. (Dec. 2006, San Francisco) (Invited)

2)K. Tomida, K. Kita and A. Toriumi, "Scalability of Higher-k Si Doped HfO2 down to EOT=0.6nm in Purely Direct Tunneling Regime" 37th IEEE Semiconductor Interface Specialists Conference (SISC) (Dec.2006, San Diego)

3)Y. Yamamoto, K. Kita, K. Kyuno and A. Toriumi, "The origin of VFB shift in Metal/HfLaO/SiO2/Si systems"37th IEEE Semiconductor Interface Specialists Conference (SISC) (Dec.2006, San Diego)

4)H. Nomura, T. Nishimura, K. Kita and A. Toriumi, "Low Temperature Zerbst Analysis of Au/High-k/ Ge MIS Capacitors." Extended Abstracts of 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices Science and Technology (IWDTF), pp15-16 (Nov. 2006, Kawasaki)

5)Y. Yamamoto, K. Kita and A.Toriumi, "Vfb Modification by Thin La2O3 Insertion into HfO2/SiO2 Interface." Extended Abstracts of 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices Science and Technology (IWDTF), pp65-66 (Nov. 2006, Kawasaki)

6)K. Tomida, K. Kita and A. Toriumi, "Experimental Determination of Tunneling Effective Mass in HfO2." Extended Abstracts of 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices Science and Technology (IWDTF), pp123-124 (Nov. 2006, Kawasaki)

6)Y. Zhao, K. Kita, K. Kyuno and A.Toriumi, "Dielectric Properties of Amorphous LaTaOx Films for Alternative Gate Dielectrics" Extended Abstracts of 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices Science and Technology (IWDTF), pp129-130 (Nov. 2006, Kawasaki)

7)T. Takahashi, H. Nomura, T. Nishimura, K. Kita and A.Toriumi, "Ge MIS Characteristics with GeNx and GeON Layers Nitrided by Atomic Nitrogen Irradiation." Proceedings of the 2nd Tsinghua International Forum for Doctoral Candidates and The 2nd TU-UT-SNU Student Workshop, pp 112-114 (Oct. 2006, Beijing)

8)T. Yokoyama, T. Nishimura, K. Kita, K. Kyuno and A. Toriumi, "Threshold Voltage Control in Pentacene TFTs by Perfluoropentacene Stack." Proceedings of the 2nd Tsinghua International Forum for Doctoral Candidates and The 2nd TU-UT-SNU Student Workshop, pp 125-130 (Oct. 2006, Beijing)

9)K. Kita, H. Nomura, T. Nishimura and A. Toriumi, " Impact of Dielectric Material Selection on Electrical Properties of High-k/Ge Devices" 210th Meeting of The Electrochemical Society (ECS), (Oct. 2006, Cancun) (invited).

10)Y. Zhao, K. Kita, K. Kyuno and A. Toriumi, "High-k LaYOx Films with Strong Moisture-Robustness." 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings (ICSICT) (part 1 of 3), pp 427-429 (Oct. 2006, Shanghai)

11)H. Nomura, T. Takahashi, T. Nishimura, K. Kita and A. Toriumi, "Oxidation and Reduction of GeOx/Ge and GeOx/ Si in O2 and N2 annealing." Program and Abstracts Second International Workshop on New Group IV Semiconductor Nanoelectronics, pp31-32 (Oct. 2006, Sendai)

12)T. Takahashi, H. Nomura, T. Nishimura, K. Kita and A. Toriumi, "Ge MIS Characteristics with GeNx and GeON Layers Nitrided by Atomic Nitrogen Irradiation." Program and Abstracts Second International Workshop on New Group IV Semiconductor Nanoelectronics, pp33-34 (Oct. 2006, Sendai)

13)A. Toriumi, K. Kita and T. Nishimura, "Interface Properties of Ge with High-k Dielectrics and Metals." Program and Abstracts Second International Workshop on New Group IV Semiconductor Nanoelectronics, pp41-42 (Oct. 2006, Sendai) (Invited)

14
) Y. Yamamoto, K. Kita, K. Kyuno and A. Toriumi, "Study of La Concentration Dependent Vfb Shift in Metal/HfLaOx/Si Capacitors." Extended Abstracts of 2006 International Conference on Solid State Devices and Materials (SSDM), pp.212-213 (Sep. 2006, Yokohama)

15) K. Tomida, K. Kita, K. Kyuno and A. Toriumi, "Excellent Leakage Current of Crystallized Silicon-Doped HfO2 Films Down to Sub-nm EOT." Extended Abstracts of 2006 International Conference on Solid State Devices and Materials (SSDM), pp.390-391 (Sep. 2006, Yokohama)

16) T. Nishimura, K. Kita and A. Toriumi, "Strong Fermi-level Pinning of Wide Range of Work-function Metals at Valence Band Edge of Germanium." Extended Abstracts of 2006 International Conference on Solid State Devices and Materials (SSDM), pp.400-401 (Sep. 2006, Yokohama)

17) Y. Zhao, K. Kita, K. Kyuno and A. Toriumi, "Suppression of Leakage Current and Moisture Absorption of La2O3 Films with Ultraviolet Ozone Post Treatment." Extended Abstracts of 2006 International Conference on Solid State Devices and Materials (SSDM), pp.402-403 (Sep. 2006, Yokohama)

18) H. Nomura, K. Kita, T. Nishimura and A. Toriumi, "Interface Layer Control at Y2O3/Ge by N2 and O2 Annealing on Ge(100) and Ge(111) Surface." Extended Abstracts of 2006 International Conference on Solid State Devices and Materials (SSDM), pp.406-407 (Sep. 2006, Yokohama)

19) C. B. Park, T. Nishimura, T. Yokoyama, K. Kita and A. Toriumi, "Reduction of Bias-Induced Threshold Voltage Shift in Pentacene Field Effect Transistors by Interface Modification and Molecular Ordering." Extended Abstracts of 2006 International Conference on Solid State Devices and Materials (SSDM), pp.924-925 (Sep. 2006, Yokohama)

19) T. Yokoyama, T. Nishimura, K. Kita, K. Kyuno and A. Toriumi, "Threshold Voltage Control in Pentacene TFTs by Perfluoropentacene Stack." Extended Abstracts of 2006 International Conference on Solid State Devices and Materials (SSDM), pp.936-937 (Sep. 2006, Yokohama)

20) K. Kita, H. Irie and A. Toriumi, "Experimental Evidence for Invalidity of Matthiessen's Rule for MOS Inversion Layer Mobility Analysis through Hall Factor Measurement." Extended Abstracts of 2006 International Conference on Solid State Devices and Materials (SSDM), pp.1060-1061 (Sep. 2006, Yokohama)

21) K. Kita, K. Tomida, Y. Yamamoto, Y. Zhao, K. Kyuno, and A. Toriumi "Dielectric Properties of Metal-Doped HfO2 for Higher-k Gate Insulators," 2006 International Meeting for Future of Electron Devices, Kansai, pp.27-28 (Apr. 2006, Kyoto) (Invited)

22) K. Tomida, K. Kita, K. Kyuno, and A. Toriumi, "Origin of Permittivity Enhancement of HfSiO and HfON Film with High Temperature Annealing," International Conference on Microelectronics and Interfaces (ICMI '06) ,(Mar. 2005, Austin).


2005

Journals

1)H. Shimizu, K. Kita, K. Kyuno, and A. Toriumi, "Kinetic Model of Si Oxidation at HfO2/Si Interface with Post Deposition Annealing," Jpn. J. Appl. Phys. Pt.1, 44 (8) 6131 - 6135 (2005)

2) K. Kyuno, K. Kita, and A. Toriumi, "Evolution of leakage paths in HfO2/SiO2 stacked gate dielectrics: A stable direct observation by ultrahigh vacuum conducting atomic force microscopy", Appl. Phys. Lett. 86 (6), 063510 (2005)

3) K.Kita, K. Kyuno and A. Toriumi, "Permittivity increase of yttrium-doped HfO2 through structural phase transformation", Appl. Phys. Lett. 86, 102906 (2005)

International Conferences

1) Y. Yamamoto, K. Kita, K. Kyuno and A. Toriumi, "High Crystallization Temperature and Low Fixed Charge Density of HfLaOx Films" 36th IEEE Semiconductor Interface Specialists Conference (SISC), (Dec. 2005, Arlington)

2) T. Yokoyama, T. Nishimura, K. Kita, K. Kyuno, A. Toriumi, "Performance Recovery of n-channel Perfluoropentacene Thin Film Transistors by High Vacuum Annealing" Extended Abstracts of 2005 International Conference on Solid State Devices and Materials (SSDM), pp.984-985 (Sep. 2005, Kobe)

3) H. Nomura, K. Kita, K. Kyuno and A. Toriumi, "Thermally Robust Y2O3/Ge MOS Capacitors"Extended Abstracts of 2005 International Conference on Solid State Devices and Materials (SSDM), pp.858-859 (Sep. 2005, Kobe)

4) H. Irie and A. Toriumi, "Advanced Split-CV Technique for Accurate Extraction of Inversion Layer Mobility in Short Channel MOSFETs." Extended Abstracts of 2005 International Conference on Solid State Devices and Materials (SSDM), pp.864-865 (Sep. 2005, Kobe)

5) Y. Yamamoto, K. Kita, K. Kyuno, and A. Toriumi, "A New Hf-based Dielectric Member, HfLaOx, for Amorphous High-k Gate Insulators in Advanced CMOS."Extended Abstracts of 2005 International Conference on Solid State Devices and Materials (SSDM), pp.254-255 (Sep. 2005, Kobe)

6) K. Kita, Yi Zhao, Y. Yamamoto, K. Kyuno, and A. Toriumi, "Design Methodology for La2O3-Based Ternary Higher-k Dielectrics." Extended Abstracts of 2005 International Conference on Solid State Devices and Materials (SSDM), pp.252-253 (Sep. 2005, Kobe)

7) Yi Zhao, M. Toyama, K. Kita, K. Kyuno, and A. Toriumi, "Moisture Absorption-Induced Permittivity Deterioration and Surface Roughness Enhancement of Lanthanum Oxide Films on Silicon."Extended Abstracts of 2005 International Conference on Solid State Devices and Materials (SSDM), pp.546-547 (Sep. 2005, Kobe)

8) T. Nishimura, M. Toyama, K. Kita, K. Kyuno and A. Toriumi, "Ion-Implanted p/n Junction Characteristics p- and n-type Germanium." Extended Abstracts of 2005 International Conference on Solid State Devices and Materials (SSDM), pp.520-521 (Sep. 2005, Kobe)

9) K. Tomida, K. Kita,and A. Toriumi, "Permittivity Enhancement of Hf(1-x)SixO2 Film with High Temperature Annealing." Extended Abstracts of 2005 International Conference on Solid State Devices and Materials (SSDM), pp.232-233 (Sep. 2005, Kobe)

10) T. Yokoyama, T. Nishimura, K. Kita, K. Kyuno, A. Toriumi, "Energy Level Consideration of Source/Channel/Drain for Performance Enhancements of N- and P-Channel Organic FETs,"
Device Research Conference (June. 2005, Santa Barbara)

11) A. Toriumi, K. Tomida, H. Shimizu, K. Kita and K. Kyuno, "Far- and Mid- Infrared Absorption Study of HfO2/SiO2/Si System,"
207th Meeting of the Electrochemical Society (May. 2005, Quebec City ) (Invited)

12) A. Toriumi, K. Kita, M. Toyama, and K. Kyuno, "Interface Reaction of High-k Films with Germanium Substrate," 2005 MRS Spring Meeting (March. 2005, San Francisco) (Invited)



2004

Journals

1) M.Tejima, K. Kita, K. Kyuno and A. Toriumi, "Study on the growth mechanism of pentacene thin films by the analysis of island density and island size distribution",
Appl. Phy. Lett. 85(17) 3746 (2004)

2) K. Kita, K. Kyuno, and A. Toriumi, " Growth mechanism difference of sputtered HfO2 on Ge and on Si," Appl. Phy. Lett. 85(1) 52-54 (2004)


International Conferences

1) H.Irie, K. Kita, K. Kyuno, and A. Toriumi, "In-Plane Mobility Anisotropy and Universality Under Uni-Axial Strains in N-and P-MOS Inversion Layers on (100), (110), and (111) Si," IEEE International Electron Dvices Meeting (IEDM), (Dec. 2004, San Francisco)

2) K. Kita K. Kyuno, and A. Toriumi, "Permittivity Increase of Yttrium-Doped HfO2 through Structural Phase Transformation," 35th IEEE Semiconductor Interface Specialists Conference (SISC), (Dec. 2004, San Diego)

3) A. Toriumi, T. Yokoyama, T. Nishimura, T. Yamada, K. Kita and K. Kyuno, "Semiconducting Properties of Pentacene Thin Films Studied by Complex Impedance Analysis and Photo-induced Effects" 206th Meeting of The Electrochemical Society, (Oct. 2004, Hawaii) (Invited)

4) M. Toyama, K. Kita, K. Kyuno and A. Toriumi, "Advantages of Ge (111) Surface for High Quality HfO2/Ge Interface," Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM), pp.226-227 (Sep. 2004, Tokyo)

5) M. Sasagawa, K. Kita, K. Kyuno and A. Toriumi, "Post-Deposition Annealing Effects on Interface States Generation in HfO2/SiO2/Si MOS Capacitors," Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM), pp.534-535 (Sep. 2004, Tokyo)

6) H. Irie, K. Kita, K. Kyuno, and A. Toriumi, "In-Plane Anisotropy of MOS Inversion Layer Mobility on Silicon (100), (110) and (111) Surfaces," Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM), pp.724-725 (Sep. 2004, Tokyo)

7) T. Yokoyama, T. Nishimura, K. Kita, K. Kyuno, and A. Toriumi, "Accumulated Carrier Density Dependence of Pentacene TFT Mobility Determined by Split C-V Technique," Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM), pp.856-857 (Sep. 2004, Tokyo)

8) T. Nishimura, T. Yokoyama, K. Kita, K. Kyuno, and A. Toriumi, "Complex Impedance Analysis and Photo-Induced Effects of Semiconducting Pentacene Films," Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM), pp.866-867 (Sep. 2004, Tokyo)

9) K. Kita, K. Kyuno and A. Toriumi " Difference between O2 and N2 Annealing Effects on CVD-SiO2 Film Quality Studied by Open-Circuit Measurement," Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM), pp.786-787 (Sep. 2004, Tokyo)

10) K. Tomida, K. Kita, K. Kyuno and A. Toriumi, "Far Infrared Study of Structural Distortion and Transformation of HfO2 by Introducing a Slight Amount Si," Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM), pp.790-791 (Sep. 2004, Tokyo)

11) K. Kyuno, K. Kita and A. Toriumi "Stable Observation of the Evolution of Leakage Spots in HfO2/SiO2 stacked structures," Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM), pp.788-789 (Sep. 2004, Tokyo)

12)K. kita, K. Kyuno and A. toriumi," Dielectric Constant Increase of Yttrium-Doped HfO2 by Structural Phase Modification," Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM), pp.794-795(Sep. 2004, Tokyo)

13) H. Shimizu, K. Kita, K. Kyuno and A. Toriumi, "Generalized Model of Oxidation Mechanism at HfO2/Si Interface with Post-Deposition Annealing," Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM), pp.796-797 (Sep. 2004, Tokyo)

14) A. Toriumi, "Challenges and Progress of High-k Gate Dielectrics for Advanced CMOS Technology" (June2004, Niigata) (Invited)

15) A. Toriumi, " Materials Engineering for High-k Gate Stack Technology," Int. Workshop Dielectric Thin Films for Future ULSI Devices (IWDTF) ( May 2004, Tokyo) ( plenary)

16) A. Toriumi, N. Yasuda, H. Ota, H. Hisamatsu, W. Mizubayashi, T. Nabatame and T. Horikawa, " Threshold Voltage Instability and Inversion Layer Mobility Degradation of HfAlOx(N) Gate Dielectric CMOS," 2004 MRS Spring Meeting (Apr. 2004, San Francisco) (Invited)

17) K. Tomida, H. Shimizu, K. Kita, K. Kyuno and A. Toriumi, "IR Absorption Study of HfO2 and HfO2/Si Interface Ranging from 200cm-1 to 2000cm-1", 2004 MRS Spring Meeting (Apr. 2004, San Francisco)

18) K. Kita, M. Sasagawa, M. Toyama, K. Kyuno, and A. Toriumi, "Retarded Growth of Sputtered HfO2 Films on Germanium", 2004 MRS Spring Meeting (Apr. 2004, San Francisco)



2003

Journals

1) K. Kita, M. Sasagawa, K. Kyuno and A. Toriumi, “New Method for Characterizing Dielectric Properties of High-k Films with Time-Dependent Open-Circuit Potential Measurement", Jpn. J. Appl. Phys. 42, Pt.2 (6B) L631-L633 (2003)

2) T. Komoda, K. Kita, K.Kyuno and A. Toriumi, “Peformance and Degradation in Single Grain-size Pentacene Thin-Film Transistors", Jpn. J. Appl. Phys. 42, Pt.1 (6A) 3662-3665 (2003)


International Conferences

1) A. Toriumi, H. Inoue and K. Kita,"What should be considered for Reliability Assurance of High-k Gate Dielectrics?",IUMRS-ICAM (Oct. 2003) (Invited)

2) H. Irie, K. Kita, K. Kyuno and A. Toriumi, "Re-Investigation of MOS Inversion Layer Mobility from Non-Universality and Possible New Scattering Mechanism Aspects", IEEE International Electron Devices Meeting (IEDM 2003) (Dec. 2003, Washington, D.C.)

3) K. Kita, M. Sasagawa, K. Tomida, M. Toyama, K. Kyuno and A. Toriumi, "Further EOT Scaling of Ge/HfO2 over Si/HfO2 MOS Systems", International Workshop on Gate Insulator (IWGI2003) (Nov. 2003, Tokyo)

4) M. Tejima, K. Kita, K. Kyuno, and A. Toriumi, "Anomalous Growth Temperature Dependence of the Surface Roughness of Pentacene Thin Films", Extended Abstracts of 2003 International Conference on Solid State Devices and Materials (SSDM), pp. 214-215 (Sep. 2003, Tokyo)

5) K. Kita, M. Sasagawa, K. Tomida, K. Kyuno and A. Toriumi, "Oxidation-Induced Damages on Germanium MIS Capacitors with HfO2 Gate Dielectrics", Extended Abstracts of 2003 International Conference on Solid State Devices and Materials (SSDM), pp.292-293 (Sep. 2003, Tokyo)

6) H. Shimizu, M. Sasagawa, K. Kita, K. Kyuno and A. Toriumi, "Interface Oxidation Mechanism in HfO2/Silicon System with Post-Deposition Annealing", Extended Abstracts of 2003 International Conference on Solid State Devices and Materials (SSDM), pp.486-487 (Sep. 2003, Tokyo)

7) H. Irie, K. Kita, K. Kyuno, S. Takagi, K. Takasaki, M. Kubota, S. Saito, S. Nishikawa and A. Toriumi, "Re-Examination on the Universality of Si-MOS Inversion Layer Mobility", Extended Abstracts of 2003 International Conference on Solid State Devices and Materials (SSDM), pp.716-717 (Sep. 2003, Tokyo)

8) K. Kita, M. Sasagawa, K. Kyuno and A. Toriumi, “A New Characterization Technique for Depth-Dependent Dielectric Properties of High-k Films by Open-Circuit Potential Measurement”, 2003 Int. Conference on Characterization and Metrology for ULSI Technology, AIP Conf. Proceedings 550, pp. 166-170 (Mar. 2003, Austin)

9) A. Toriumi, T. Komoda, K. Kita and K. Kyuno, "Electrical Characterization of Metal / Oxide / Pentacene Capacitors", Abstracts of 2nd International Conference on Molecular Electronics and Bioelectronics (M&BE2), p.117 (Mar. 2003, Tokyo) (Invited)
.



2002

Journals

1) T. Komoda, Y. Endo, K. Kyuno, and A. Toriumi, "Field-Dependent Mobility of Highly-Oriented Pentacene (C22H14) Thin Film Transistors", Jpn. J. Appl. Phys. 41, Pt.1 (4B) 2767-2769 (2002)

International Conferences

2) K. Kita, M. Sasagawa, K. Kyuno and A. Toriumi, “New method for Characterizing Dielectric Properties of High-k Films Using Time-Dependent Open-Circuit Potential Measurement", Extended Abstracts of 2002 International Conference on Solid State Devices and Materials (SSDM), pp. 66-67 (Sep. 2002, Nagoya)

3) T. Komoda, K. Kita, K.Kyuno and A. Toriumi, “Performance and Time-dependent Degradation in a Single Grain-size Pentacene TFTs", Extended Abstracts of 2002 International Conference on Solid State Devices and Materials (SSDM), pp. 202-203 (Sep. 2002, Nagoya)

4) K. Kita, Y. Osaka, K. Kyuno, S. Takagi, K. Takasaki, M. Kubota, Y. Shimamoto, and A. Toriumi, "Graphical Approach to Sensitive Detection of Interface Defects in Thin Oxide MOS Capacitors", Proceedings of the 2nd International Semiconductor Technology Conference (ISTC-2) , pp.206-214 (Sep. 2002, Tokyo)



2001

International Conference

1) T. Komoda, Y. Endo, K. Kyuno and A. Toriumi, "Field-Dependent Mobility of Highly-Oriented Pentacene (C22H14) Thin Film FETs", Extended Abstracts of 2001 International Conference on Solid State Devices and Materials (SSDM), pp. 398-399 (Sep. 2001, Tokyo)




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